In situ transmission electron microscopy of resistive switching in thin silicon oxide layers FIB Lamella, Holography, Lightning, Materials Science, Micro Electronics Skills Posted on May 2, 2017 ← Thermally Induced Dynamics of Dislocations in Graphene at Atomic Resolution In Situ TEM Analysis of Organic–Inorganic Metal-Halide Perovskite Solar Cells under Electrical Bias →