In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface

In this work the DENSsolutions in situ TEM Lightning system has been employed to study the temperature induced nucleation behavior in Ge2Se2Te5 samples In Situ. This material is used as Phase Change Memory (PCM) and the knowledge of the amorphous-to-crystallize transition and the crystallization behavior is essential to its application, especially in nanometer or sub-nanometer modern and future electronics.

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