Dr. Leonardo Vicarelli
Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands
Authors | Leonardo Vicarelli, Stephanie J. Heerema, Cees Dekker, and Henny W. Zandbergen Email | firstname.lastname@example.org
|Application||Controlling Defects in Graphene for Optimizing the Electrical Properties of Graphene Nanodevices|
|Authors||Leonardo Vicarelli, Stephanie J. Heerema, Cees Dekker, and Henny W. Zandbergen|
|Journal||ACS Nano, 2015|
|Publication||Full Publication Here – DOI:10.1021/acsnano.5b01762|
Controlling Defects in Graphene for Optimizing the Electrical Properties of Graphene Nanodevices
Abstract: Structural defects strongly impact the electrical transport properties of graphene nanostructures. In this Perspective, we give a brief overview of different types of defects in graphene and their effect on transport properties. We discuss recent experimental progress on graphene self-repair of defects, with a focus on in situ transmission electron microscopy studies. Finally, we present the outlook for graphene self-repair and in situ experiments.
Figure 1. Structural defects in graphene. (ad) High-resolution transmission electron microscopy (HRTEM) images of (a) StoneWales defect, (b) defect-free graphene, (c) single vacancy with 59 rings, (d) divacancy with 585 rings. Scale bar is 1 nm. (eh) HRTEM image sequence of divacancy migration observed at 80 keV. Scale bar is 1 nm. Reprinted with permission from ref 13. Copyright 2011 American Physical Society. (i) Scanning transmission microscopy image of a single N atom dopant in graphene on a copper foil substrate. (Inset) Line profile across the dopant shows atomic corrugation and apparent height of the dopant. Reprinted with permission from ref 15. Copyright 2011 American Association for the Advancement of Science. (l,m) HRTEM images of a Pt atom trapped in divacancy and (n) simulated HRTEM image for the Pt vacancy complex. Scale bar is 1 nm. Reprinted from ref 14. Copyright 2012 American Chemical Society.